Superior current enhancement in SiGe channel p-MOSFETs fabricated on (110) surface

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 148-149

  Liu, P W ^a   Pan, J W ^a   Chang, T Y ^a   Tsai, T L ^a   Chen, T F ^a   Liu, Y C ^a   Tsai, C H ^a   Lan, B C ^a   Lin, Y H ^a   Chiang, W T ^a   Tsai, C T ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

(110) surface; p MOSFET; SiGe channel

Indexed keywords

COMPRESSIVE STRESS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; STRAIN MEASUREMENT;

CURRENT ENHANCEMENT; PIEZORESISTANCE COEFFICIENTS;

MOSFET DEVICES;

EID: 41149108127     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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