Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices

Journal of Crystal Growth

Volumn 311, Issue 11, 2009, Pages 3152-3157

  Hartmann, J M ^a   Papon, A M ^a   Barnes, J P ^a   Billon, T ^a  

^a CEA LETI   (France)

Author keywords

A3. Chemical vapor deposition processes; B1. Germanium silicon alloys

Indexed keywords

A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B1. GERMANIUM SILICON ALLOYS; BACK UP; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; GE CONCENTRATIONS; GE CONTENT; MEAN VALUES; MULTI-CHANNEL; MULTICHANNEL DEVICES; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SI(0 0 1); SIGE/SI; SILICON ON INSULATOR; SILICON-ON-INSULATOR SUBSTRATES; SOI SUBSTRATES; SURFACE TEMPERATURE VARIATION;

BIOACTIVITY; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GERMANIUM; GERMANIUM ALLOYS; GROWTH KINETICS; MICROSENSORS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

SILICON ALLOYS;

EID: 65849092761     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.027     Document Type: Article

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