Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Low, Tony ^a   Li, M F ^a   Yeo, Y C ^a   Fan, W J ^b   Ng, S T ^b   Kwong, D L ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM THICKNESS; SILICON-ON-INSULATOR (SOI); SURFACE ORIENTATION; ULTRATHIN BODY (UTB); VALENCE BAND STRUCTURE;

ANISOTROPY; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; GERMANIUM; INTERFACIAL ENERGY; MOS DEVICES; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; THIN FILMS; ULTRATHIN FILMS;

FIELD EFFECT TRANSISTORS;

EID: 23844438312     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1948528     Document Type: Article

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