Step and flash nano imprint lithography of 80nm dense line pattern using trehalose derivative resist material

Applied Physics Express

Volumn 3, Issue 2, 2010, Pages

  Takei, Satoshi ^a,b,c  

^a NISSAN CHEMICAL INDUSTRIES LTD   (Japan)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; HIGH RESOLUTION; LINE PATTERN; LINE PATTERNING; NANO IMPRINT; RESIDUAL RESISTS; RESIST MATERIALS; ULTRAVIOLET CROSSLINKING;

ELECTRON BEAM LITHOGRAPHY;

NANOIMPRINT LITHOGRAPHY;

EID: 76949094842     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.025202     Document Type: Article

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