Gap fill materials using cyclodextrin derivatives in ArF lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 11, 2007, Pages 7273-7278

  Takei, Satoshi ^a   Shinjo, Tetsuya ^a   Sakaida, Yasushi ^a   Hashimoto, Keisuke ^a  

^a NISSAN CHEMICAL INDUSTRIES LTD   (Japan)

Author keywords

ArF lithography; Cyclodextrin; Dual damascene; Etch rate; Gap fill materials

Indexed keywords

DERIVATIVES; LITHOGRAPHY; MOLECULAR WEIGHT; PHOTORESISTS; REACTIVE ION ETCHING; VISCOSITY;

ARF LITHOGRAPHY; DUAL DAMASCENE; ETCH RATE; GAP FILL MATERIALS; OHNISHI PARAMETER;

CYCLODEXTRINS;

EID: 35948937660     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7273     Document Type: Article

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