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Volumn 47, Issue 5 PART 1, 2008, Pages 3412-3417
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Development of developer-soluble gap fill materials for planarization in via-first dual damascene process
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Author keywords
Dual damascene; Etch rate; Gap fill materials; Lithography; Planarization
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Indexed keywords
ABS RESINS;
ANTIREFLECTION COATINGS;
CLEANING;
CONCENTRATION (PROCESS);
DISSOLUTION;
GALLIUM ALLOYS;
LITHOGRAPHY;
METAL RECOVERY;
PHENOLS;
PHOTORESISTS;
RATE CONSTANTS;
THROUGHPUT;
ADVANCED LITHOGRAPHIES;
ALKALINE DEVELOPERS;
BOTTOM ANTIREFLECTIVE COATINGS;
DISSOLUTION RATES;
DRY PLASMAS;
DUAL DAMASCENE;
DUAL DAMASCENE PROCESSES;
ETCH RATE;
ETCH RATES;
GAP FILL MATERIALS;
HIGH THROUGHPUTS;
HYDROXYSTYRENE;
OPTIMIZING;
PATTERNING;
PHENOL GROUPS;
PLANARIZATION;
PLANARIZING;
POLYMER STRUCTURES;
PREBAKE TEMPERATURES;
PROCESS WINDOWS;
RESIDUAL GAPS;
SACRIFICIAL MATERIALS;
TETRAMETHYLAMMONIUM HYDROXIDES;
COATED MATERIALS;
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EID: 55049095501
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.3412 Document Type: Article |
Times cited : (2)
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References (12)
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