The effect of low frequency pulse-shaped substrate bias on the remote plasma deposition of a-Si: H thin films

Plasma Sources Science and Technology

Volumn 19, Issue 1, 2010, Pages

  Martin, I T ^a   Wank, M A ^b   Blauw, M A ^a   Van Swaaij, R A C M M ^b   Kessels, W M M ^a   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BIAS CONDITIONS; EMISSION INTENSITY; EXPANDING THERMAL PLASMA DEPOSITIONS; FILM PROPERTIES; H-CONTENT; HYDROGENATED AMORPHOUS SILICON; ION CURRENTS; LOW FREQUENCY; LOW SUBSTRATE TEMPERATURE; REMOTE PLASMA DEPOSITION; RF BIAS; SHARP INCREASE; SUBSTRATE BIAS; SUBSTRATE BIAS VOLTAGES; SUBSTRATE BIASING;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; DEPOSITION; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OPTICAL EMISSION SPECTROSCOPY; PLASMAS; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES;

PLASMA DEPOSITION;

EID: 76649144225     PISSN: 09630252     EISSN: 13616595     Source Type: Journal    
DOI: 10.1088/0963-0252/19/1/015012     Document Type: Article

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