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Volumn 157, Issue 3, 2010, Pages

C redistribution during Ni silicide formation on Si1-y C y epitaxial layers

(11) Lee, S W a Huang, S S a Hsu, H C b Nieh, C W b Tsai, W C b Lo, C P b Lai, C H b Tsai, P Y b Wang, M Y b Wu, C M b Lei, M D b

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

C ATOMS; EPILAYERS GROWN; LOW RESISTIVITY; NI SILICIDE; NISI LAYERS; PROCESS WINDOW; SI(0 0 1); SILICIDATION; SUB-LAYERS; THERMAL STABILITY;

AGGLOMERATION; ATOMS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; NICKEL COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; THERMODYNAMIC STABILITY; THIN FILMS; NICKEL;

GRAIN GROWTH;

EID: 76349089588 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3276060 Document Type: Article

Times cited : (10)

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