Characteristics of strained-Si nMOSFET using nickel silicide source/drain

Journal of the Electrochemical Society

Volumn 155, Issue 8, 2008, Pages

  Kuo, C W ^a   Wu, S L ^b,d   Chang, S J ^a   Lin, H Y ^a   Wang, Y P ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c VANUNG UNIVERSITY   (Taiwan)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; HEALTH; METALS; NICKEL; NICKEL ALLOYS; NICKEL COMPOUNDS; PHOTOACOUSTIC EFFECT; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; SILICON; TRANSISTORS;

CHANNEL MOBILITIES; CONTROL DEVICES; DRIVING CURRENTS; ELECTROCHEMICAL SOCIETY (ECS); LARGE AREA DEVICES; METAL-OXIDE SEMICONDUCTOR (MOS); MOBILITY BEHAVIOR; N MOSFET; N MOSFETS; NI SILICIDE; NICKEL SILICIDE (NISI); NON UNIFORM; OFF-STATE LEAKAGE; PATTERN EFFECTS; SHALLOW TRENCH ISOLATION (STI); SOURCE/DRAIN (S/D) RESISTANCE; STRAINED-SI; STRONG ENHANCEMENT;

SEMICONDUCTING SILICON;

EID: 46649085919     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2946427     Document Type: Article

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