Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 215-221

  Zaima, Shigeaki ^a   Nakatsuka, Osamu ^a   Sakai, Akira ^a   Murota, Junichi ^b   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Carbon; Contact; Germanium; Nickel; Silicide

Indexed keywords

AGGLOMERATION; ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); EPITAXIAL GROWTH; GRAIN BOUNDARIES; NICKEL COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SURFACE CHEMISTRY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS; X RAY DIFFRACTION;

CONTACT; SILICIDE; ULTRA LARGE SCALE INTEGRATED CIRCUIT TECHNOLOGY (ULSI);

SILICON COMPOUNDS;

EID: 1142268142     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.049     Document Type: Conference Paper

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