Effect of C incorporation on relaxation of SiGe/Si

Applied Physics Letters

Volumn 93, Issue 22, 2008, Pages

  Kim, H W ^a   Choi, S ^a   Hong, S ^a   Jung, H K ^a   Lee, G D ^a   Yoon, E ^a   Kim, C S ^b  

^a Seoul National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; HETEROJUNCTIONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; VACUUM; VACUUM DEPOSITION;

C INCORPORATIONS; CROSS HATCHES; HETEROSTRUCTURES; MISFIT DISLOCATIONS; SI SUBSTRATES; SIGE/SI; SIGEC LAYERS; STEP HEIGHTS; STRAINED SI; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITIONS;

SILICON;

EID: 57349195594     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3040308     Document Type: Article

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