Thickness effect of a Ge interlayer on the formation of nickel silicides

Journal of the Electrochemical Society

Volumn 154, Issue 9, 2007, Pages

  Choi, Chel Jong ^a   Chang, Sung Yong ^b   Lee, Seong Jae ^a,d   Ok, Young Woo ^c   Seong, Tae Yeon ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Electric Power Research Institute (KEPRI)   (South Korea)

^c Korea University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE X RAY ANALYSIS; NICKEL COMPOUNDS; RAPID THERMAL ANNEALING; SUBSTRATES; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

ENERGY-DISPERSIVE X-RAY SPECTROMETRY; INTERLAYERS; NICKEL SILICIDES; THICKNESS EFFECT;

SEMICONDUCTING GERMANIUM;

EID: 34547545538     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2749099     Document Type: Article

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