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Volumn 518, Issue 9, 2010, Pages 2307-2313

Amorphization, recrystallization and end of range defects in germanium

Author keywords

Amorphization; End of range defects; Germanium; Ion implantation; Recrystallization

Indexed keywords

AMORPHOUS LAYER; ARRHENIUS; BASIC RESEARCH; CRITICAL DAMAGE; CRYSTALLINE-TO-AMORPHOUS; END-OF-RANGE DEFECTS; EQUILIBRIUM CONDITIONS; EXTENDED DEFECT; GERMANIUM ION IMPLANTATION; IMPLANTED DOPANTS; OSTWALD RIPENING MECHANISM; RECRYSTALLIZATIONS; SOLID PHASE EPITAXY; TRANSIENT DIFFUSION;

EID: 76049102146     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.162     Document Type: Article
Times cited : (56)

References (46)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.