Amorphization kinetics of germanium during ion implantation

Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

  Koffel, S ^a,b   Scheiblin, P ^a   Claverie, A ^b   Benassayag, G ^b  

^a CEA LETI   (France)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; CRITICAL DAMAGE; CRYSTALLINE-TO-AMORPHOUS; DEFECT ANNIHILATION; DI-INTERSTITIALS; DIVACANCIES; INTERSTITIALS; LIGHT IONS; ROOM TEMPERATURE; STABLE COMPLEXES;

AMORPHIZATION; BORON; BORON COMPOUNDS; GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; PHASE TRANSITIONS; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY; WEAR RESISTANCE;

AMORPHOUS SILICON;

EID: 67649790855     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3041653     Document Type: Article

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