Nucleation, growth and dissolution of extended defects in implanted Si: Impact on dopant diffusion

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 1-12

  Claverie, A ^a   Giles, L F ^a   Omri, M ^a   De Mauduit, B ^a   Ben Assayag, G ^a   Mathiot, D ^b  

^a CEMES CNRS   (France)

^b UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

Dopant diffusion; Extended defects; Ion implantation; Nucleation; Ostwald ripening

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ATOMS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DIFFUSION; NUCLEATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; THERMODYNAMIC PROPERTIES;

DOPANT DIFFUSION; EXTENDED DEFECT; SELF INTERSTITIAL ATOM; TRANSIENT ENHANCED DIFFUSION;

ION IMPLANTATION;

EID: 0032714978     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00617-X     Document Type: Article

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