Study of extended-defect formation in Ge and Si after H ion implantation

Applied Physics Letters

Volumn 86, Issue 18, 2005, Pages 1-3

  Akatsu, T ^a   Bourdelle, K K ^a   Richtarch, C ^a   Faure, B ^a   Letertre, F ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; HYDROGEN; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

BORON DOPING; MICROGRAPHS; PLATELETS; SEMICONDUCTOR LAYER TRANSFER; STRAIN CONTRAST;

GERMANIUM;

EID: 20844446796     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1906319     Document Type: Article

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