From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1430-1436

  Martin Bragado, Ignacio ^a   Avci, Ibrahim ^a   Zographos, Nikolas ^b   Jaraiz, Martin ^c   Castrillo, Pedro ^c  

^a SYNOPSYS INC   (United States)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Defect evolution; Extended defects; Interstitials; Kinetic Monte Carlo; Ostwald ripenning; Transient Enhanced Diffusion

Indexed keywords

BINDING ENERGY; CHLORINE COMPOUNDS; DISSOLUTION; NONMETALS; PARAMETER ESTIMATION; POINT DEFECTS; SILICON;

ATOMISTIC MODELLING; DEFECT EVOLUTION; DEFECT SIZES; DISLOCATION LOOPS; EMISSION FREQUENCIES; EXPONENTIAL DECAYS; EXTENDED DEFECTS; INTERSTITIALS; KINETIC MONTE CARLO; MODEL ACCOUNTS; MODELLING FRAMEWORK; OSTWALD RIPENNING; SELF-INTERSTITIAL; TRANSIENT ENHANCED DIFFUSION;

DEFECTS;

EID: 50349096349     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.027     Document Type: Article

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