On the temperature dependent anomalous peak and negative capacitance in Au/n-InP schottky barrier diodes

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 3, Issue 1, 2009, Pages 56-59

  Korucu, D ^a   Altindal, S ^a   Mammadov, T S ^b   Ozcelik S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

Au n InP; DLTS measurement; Negative capacitance; Temperature dependence C V and G W V characteristics

Indexed keywords

BIAS VOLTAGE; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC RESISTANCE; IMPACT IONIZATION; INTERFACE STATES; TEMPERATURE DISTRIBUTION;

DLTS MEASUREMENTS; INCREASING TEMPERATURES; NEGATIVE CAPACITANCE; NEGATIVE CAPACITANCE EFFECT; POSITIVE BIAS VOLTAGES; SCHOTTKY BARRIER DIODES (SBDS); TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

SCHOTTKY BARRIER DIODES;

EID: 75949086748     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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