Characterisation of the interface states between amorphous diamond-like carbon films and (100) silicon

Physica Status Solidi (A) Applied Research

Volumn 161, Issue 1, 1997, Pages 111-123

  Konofaos, N ^a,b   Mcclean, I P ^a,c   Thomas, C B ^a,c  

^a UNIVERSITY OF BRADFORD   (United Kingdom)

^b UNIVERSITY OF IOANNINA   (Greece)

^c NOTTINGHAM TRENT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CHEMICAL VAPOR DEPOSITION; CURVE FITTING; DIAMOND FILMS; ELECTRONIC DENSITY OF STATES; FILM GROWTH; MATHEMATICAL MODELS; METAL INSULATOR BOUNDARIES; METHANE; SEMICONDUCTING SILICON; STATISTICAL METHODS;

DIAMOND LIKE CARBON FILMS; METAL INSULATOR SEMICONDUCTOR DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 0031145205     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199705)161:1<111::AID-PSSA111>3.0.CO;2-U     Document Type: Article

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