Fabrication and characteristics of porous germanium films

Science and Technology of Advanced Materials

Volumn 10, Issue 6, 2009, Pages

  Jing, Chengbin ^a,b   Zhang, Chuanjian ^a   Zang, Xiaodan ^a   Zhou, Wenzheng ^b   Bai, Wei ^b   Lin, Tie ^b   Chu, Junhao ^b  

^a QINGDAO UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Germanium; Porous structured film; Semiconducting behavior; Visible photoluminescence

Indexed keywords

CERAMIC FILM; DEFECT SCATTERING; GE FILMS; GERMANIUM FILMS; HIGH DENSITY; HIGHER-DEGREE; P-TYPE CONDUCTIVITY; POROUS SURFACE; RAMAN MEASUREMENTS; SEMICONDUCTING BEHAVIOR; STRUCTURED FILMS; TEM; VISIBLE PHOTOLUMINESCENCE;

CRYSTALLITES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; PHOTOLUMINESCENCE;

SEMICONDUCTING GERMANIUM;

EID: 75649118865     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1088/1468-6996/10/6/065001     Document Type: Article

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