Tensely strained silicon on SiGe produced by strain transfer

Applied Physics Letters

Volumn 85, Issue 13, 2004, Pages 2499-2501

  Buca, D ^a   Hollander B ^a   Trinkaus, H ^a   Mantl, S ^a   Carius, R ^a   Loo, R ^b   Caymax, M ^b   Schaefer, H ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IMEC   (Belgium)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ION IMPLANTATION; MATHEMATICAL MODELS; NATURAL FREQUENCIES; PHONONS; POISSON RATIO; RAPID THERMAL ANNEALING; REGRESSION ANALYSIS; SHEAR DEFORMATION; STRAIN RATE; TRANSMISSION ELECTRON MICROSCOPY;

LINEAR REGRESSIONS; OPTICAL PHONON FREQUENCY; STRAIN TRANSFER; THREADING DISLOCATIONS (TD);

SILICON;

EID: 7644241912     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790593     Document Type: Article

References (11)

1. K. Rim, J. Chu, H. Chen, K. A. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Ieong, and H.-S. Wong, Symposium on VLSI Technology Digest of Technical Papers 2002, 98.
2. E. Fitzgerald, M. Currie, S. Samavedam, T. Langdo, G. Taraschi, V. Yang, C. Leitz, and M. Bulsara, Phys. Status Solidi A 171, 227 (1999).
3. B. Holländer, S. Lenk, S. Mantl, H. Trinkaus, D. Kirch, M. Luysberg, T. Hackbarth, H.-J. Herzog, and P. Fichtner, Nucl. Instrum. Methods Phys. Res. B 175-177, 357 (2001).
4. H. Trinkaus, B. Holländer, S. Rongen, S. Mantl, H.-J. Herzog, J. Kuchenbecker, and T. Hackbarth, Appl. Phys. Lett. 76, 3552 (2000).
5. J. Huang, Z. Ye, H. Lu, and D. Que, J. Appl. Phys. 83, 171 (1998).
6. B. Holländer, R. Butz, and S. Mantl, Phys. Rev. B 46, 6975 (1992).
7. T. Englert, G. Abstreiter, and J. Pontcharra, Solid-State Electron. 23, 31 (1980).
8. J. Tsang, P. Mooney, F. Dacol, and J. Chu, J. Appl. Phys. 75, 8098 (1994).
9. J. Matthews and A. Blakeslee, J. Cryst. Growth 27, 118 (1974).
10. L. Freund, Adv. Appl. Mech. 30, 1 (1993).
11. B. Doris, M. Ieong, H. Zhu, Y. Zhang, M. Steen, W. Natzle, S. Callegari, V. Narayanan, J. Cai, S. H. Ku, P. Jamison, Y. Li, Z. Ren, V. Ku, D. Boyd, T. Kanarsky, C. D'Emic, M. Newport, D. Dobuzinsky, S. Deshpande, J. Petrus, R. Jammy, and W. Haensch, Tech. Dig. - Int. Electron Devices Meet. 2003, 631.