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Surface and Coatings Technology

Volumn 200, Issue 10 SPEC. ISS., 2006, Pages 3261-3264

A novel method for growing polycrystalline Ge layer by using UHVCVD

(6) Tu, Chun Hao a Chang, Ting Chang b Liu, Po Tsun a Yang, Tsung Hsi a Zan, Hsiao Wen a Chang, Chun Yen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

Germanium; Polycrystalline; UHVCVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GRAIN SIZE AND SHAPE; NUCLEATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

NUCLEATION LAYER; RAMAN SHIFT SPECTRUM; ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

SEMICONDUCTING GERMANIUM;

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GRAIN SIZE AND SHAPE; NUCLEATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

EID: 31644436763 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2005.07.026 Document Type: Article

Times cited : (6)

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