From shelled Ge nanowires to SiC nanotubes

Nanotechnology

Volumn 20, Issue 3, 2009, Pages

  Dřínek, Vladislav ^a   Šubrt, Jan ^b   Klementová, Mariana ^b   Rieder, Milan ^c   Fajgar, Radek ^a  

^a INSTITUTE OF CHEMICAL PROCESS FUNDAMENTALS   (Czech Republic)

^b INSTITUTE OF INORGANIC CHEMISTRY   (Czech Republic)

^c CZECH GEOLOGICAL SURVEY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NANOTUBES; NANOWIRES; SILICON CARBIDE; TANTALUM; THICKNESS MEASUREMENT; TRANSITION METALS; VAPORS;

AMORPHOUS GERMANIUMS; GE NANOWIRES; GERMANIUM NANOWIRES; IN VACUUMS; SIC NANOTUBES; TRIMETHYLSILYL;

GERMANIUM;

GERMANIUM; GERMANIUM DERIVATIVE; NANOTUBE; NANOWIRE; SILICON CARBIDE; TANTALUM;

ARTICLE; CHEMICAL PROCEDURES; INFRARED SPECTROSCOPY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PRIORITY JOURNAL; RAMAN SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; VACUUM; X RAY ANALYSIS; X RAY DIFFRACTION;

EID: 58149218264     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/3/035606     Document Type: Article

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