Incubation effects upon polycrystalline silicon on glass deposited by hot-wire CVD

Chemical Vapor Deposition

Volumn 13, Issue 5, 2007, Pages 247-252

  Lien, Shui Yang ^a   Mao, Hsin Yuan ^a   Wu, Bing Rui ^a   Horng, Ray Hua ^a   Wuu, Dong Sing ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Growth mechanism; Hot wire CVD; Polycrystalline silicon; Raman spectroscopy; Transmission electron microscopy

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRON MICROSCOPES; HYDROGEN; MICROSCOPIC EXAMINATION; NONMETALS; NUCLEATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON; SPECIAL EFFECTS; SPECTRUM ANALYSIS; SUBSTRATES; WIRE;

AMORPHOUS; AMORPHOUS PHASIS; ATOMIC HYDROGENS; CRYSTALLINE FRACTIONS; CRYSTALLINITY; DEPOSITION PARAMETERS; DEPOSITION PROCESSES; GROWTH MECHANISM; GROWTH MECHANISMS; HOT-WIRE CVD; HYDROGEN DILUTION RATIOS; HYDROGEN DILUTIONS; INCUBATION EFFECTS; INCUBATION LAYERS; INITIAL STAGES; POLYCRYSTALLINE SILICON; POLYCRYSTALLINE SILICON ON GLASSES; POLYCRYSTALLINE SILICONS; PROCESS PARAMETERS; SEED LAYERS; SI FILMS; SMALL GRAINS; SUBSTRATE TEMPERATURES; TRANSMISSION ELECTRON MICROSCOPY MEASUREMENTS;

FILM GROWTH;

EID: 54949126382     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200606576     Document Type: Article

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