Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

Chinese Physics B

Volumn 19, Issue 1, 2010, Pages

  Yang, Hang Sheng ^a   Nie, An Min ^a   Qiu, Fa Min ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Cubic boron nitride films; Infrared spectroscopy; Plasma enhanced chemical vapour deposition

Indexed keywords

BORON NITRIDE FILMS; BORON OXIDES; CHEMICAL VAPOUR DEPOSITION; CONCENTRATION OF; CUBIC BORON NITRIDE FILMS; DEPOSITION SYSTEMS; FILM DEPOSITION; INFLUENCE OF OXYGEN; NUCLEATION AND GROWTH; OXYGEN CONTAMINATION; OXYGEN IMPURITY; SILICON SUBSTRATES; ULTRAHIGH VACUUM SYSTEM;

ABSORPTION; BORON; BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; IMPURITIES; INDUCTIVELY COUPLED PLASMA; INFRARED ABSORPTION; INFRARED SPECTROSCOPY; NUCLEATION; OXIDE FILMS; OXYGEN; PLASMA DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VACUUM;

CUBIC BORON NITRIDE;

EID: 75149132787     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/1/017202     Document Type: Article

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