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Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloys

Author keywords

Carbon precursors; Chemical vapor deposition (CVD); Inhibitor; NMOS stressor; Selective epitaxial growth (SEG); Si:C alloy; Silicon

Indexed keywords

CARBON LEVEL; CARBON PRECURSORS; CHEMICAL PRECURSORS; CO-FLOW; DEPOSITION TEMPERATURES; DICHLOROSILANES; DOPED SILICON; HIGH THROUGHPUT; HIGH VOLUME MANUFACTURING; INHIBITOR; LOW COSTS; LOW TEMPERATURE EPITAXIES; LOW TEMPERATURES; MANUFACTURABILITY; MONOMETHYLSILANE; NMOS STRESSOR; NON-TRADITIONAL; SELECTIVE EPITAXIAL GROWTH; SILICON PRECURSORS; THERMAL BUDGET;

EID: 73649123543     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.088     Document Type: Article
Times cited : (18)

References (55)
  • 38
    • 73649113110 scopus 로고    scopus 로고
    • unpublished
    • M. Bauer et al., unpublished.
    • Bauer, M.1
  • 42
    • 73649126851 scopus 로고    scopus 로고
    • P. Tomasini, C. Arena, M. Bauer, N. Cody, R. Bertram, J. Wen, M.D. Stephens, patent application US20080026149.
    • P. Tomasini, C. Arena, M. Bauer, N. Cody, R. Bertram, J. Wen, M.D. Stephens, patent application US20080026149.
  • 55
    • 73649092735 scopus 로고    scopus 로고
    • M. Bauer, P. Tomasini, patent application US20090111246
    • M. Bauer, P. Tomasini, patent application US20090111246.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.