Mechanism for SiCl2 Formation and Desorption and the Growth of Pits in the Etching of Si(100) with Chlorine

Physical Review Letters

Volumn 78, Issue 25, 1997, Pages 4877-4880

  De Wijs, G A ^a   De Vita, A ^b   Selloni, A ^c  

^a UNIVERSITÉ DE LYON   (France)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^c UNIVERSITY OF GENEVA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243286174     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.78.4877     Document Type: Article

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