SCOPUS 정보 검색 플랫폼

Volumn 6, Issue 1, 2007, Pages 429-436

Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; LOGIC GATES;

CARBON LEVEL; CHEMICAL VAPOR; EPITAXIAL SILICON; HIGH GROWTH RATE; LOW TEMPERATURES; SILICON CARBON ALLOYS; SILICON PRECURSORS; STRAINED LAYERS;

SILICON ALLOYS;

EID: 45949090969 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2727429 Document Type: Conference Paper

Times cited : (8)

References (10)

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