Growth of a SiC layer on Si(100) from adsorbed propene by laser melting

Journal of Applied Physics

Volumn 90, Issue 1, 2001, Pages 449-455

  Dragnea, Bogdan ^a,b   Boulmer, Jacques ^a   Débarre, Dominique ^a   Bourguignon, Bernard ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b INDIANA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035396930     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1379054     Document Type: Article

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