Multiscale simulation for epitaxial silicon carbide growth by chlorides route

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Masi, Maurizio ^a   Fiorucci, Alessandro ^a   Camarda, Massimo ^b   La Magna, Antonino ^b   La Via, Francesco ^b  

^a POLITECNICO DI MILANO   (Italy)

^b CNR IMM   (Italy)

Author keywords

Chemical vapor deposition; Epitaxy; Film morphology; Kinetic Monte Carlo method; Multiscale modeling; Silicon carbide

Indexed keywords

CHEMICAL VAPOR; CRYSTALLINE STRUCTURE; EPITAXIAL SILICON CARBIDE; FILM MORPHOLOGY; HOT-WALL REACTORS; KINETIC MONTE CARLO METHODS; KINETIC MONTE CARLO MODEL; LINE DEFECTS; MULTI-HIERARCHY; MULTI-SCALE MODELING; MULTI-SCALE SIMULATION; MULTISCALES; SIMPLIFIED MODELS;

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; CRYSTAL GROWTH; MONTE CARLO METHODS; MORPHOLOGY; RADIATION DAMAGE; SILICON CARBIDE; SURFACE ROUGHNESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 73649095546     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.045     Document Type: Article

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