Atomistic and continuum simulations of the homo-epitaxial growth of SiC

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 73-76

  Camarda, M ^a   La Magna, A ^a   La Via, F ^a  

^a CNR IMM   (Italy)

Author keywords

Atomistic simulations; Continuous simulations; Homoepitaxy; Step flow

Indexed keywords

INTELLIGENT SYSTEMS; MONTE CARLO METHODS; SILICON CARBIDE;

ATOMISTIC SIMULATIONS; CONTINUOUS MODELLING; CONTINUOUS SIMULATION; CONTINUUM SIMULATIONS; HOMO EPITAXIES; HOMOEPITAXIAL GROWTH; POLYCRYSTALLINE GROWTH; STEP FLOW;

EPITAXIAL GROWTH;

EID: 66249102509     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.73     Document Type: Conference Paper

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