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Volumn 310, Issue 5, 2008, Pages 971-975

Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Author keywords

A1. Atomic force microscopy; A1. Computer simulation; A1. Defects; A1. Growth models; A1. Surface structures

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; MONTE CARLO METHODS; NUCLEATION; SURFACE STRUCTURE;

EID: 39249084367     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.132     Document Type: Article
Times cited : (33)

References (13)
  • 2
    • 39249085036 scopus 로고    scopus 로고
    • M. Camarda, A. La Magna, F. La Via, J. Comput. Phys., 227 (2007) 1057.
    • M. Camarda, A. La Magna, F. La Via, J. Comput. Phys., 227 (2007) 1057.
  • 4
    • 39249083306 scopus 로고    scopus 로고
    • N. Kurada, K. Shibabara, W.S. Yoo, S. Nishino, H. Matsunami, in: S. Furukawa (Ed.), Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, Business Center for Academic Societies, Tokyo, Japan, 1987, p. 227.
    • N. Kurada, K. Shibabara, W.S. Yoo, S. Nishino, H. Matsunami, in: S. Furukawa (Ed.), Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, Business Center for Academic Societies, Tokyo, Japan, 1987, p. 227.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.