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Volumn 310, Issue 5, 2008, Pages 971-975
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Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
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Author keywords
A1. Atomic force microscopy; A1. Computer simulation; A1. Defects; A1. Growth models; A1. Surface structures
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL VAPOR DEPOSITION;
COMPUTER SIMULATION;
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
MONTE CARLO METHODS;
NUCLEATION;
SURFACE STRUCTURE;
GROWTH MODELS;
GROWTH REGIMES;
MONTE CARLO ALGORITHMS;
SILICON CARBIDE;
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EID: 39249084367
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2007.11.132 Document Type: Article |
Times cited : (33)
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References (13)
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