Multiscale simulation of silicon film growth

Crystal Research and Technology

Volumn 40, Issue 10-11, 2005, Pages 958-963

  Cavallotti, C ^a   Pantano, E ^a   Veneroni, A ^a   Masi, M ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Chemical vapour deposition; Growth; Modeling; Silicon

Indexed keywords

COMPUTER SIMULATION; MICROELECTRONICS; SILICON; VAPOR PHASE EPITAXY;

INDUSTRIAL GROWTH; OPERATIONAL PARAMETERS; VAPOR PHASE;

FILM GROWTH;

EID: 27744466015     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200410467     Document Type: Conference Paper

References (18)

1. J. L. Vossen and W. Kern, Handbook of Thin Film Technology II, Academic Press, New York NY (1991).
2. M. L. Hitchmann and K. F. Jensen, Chemical Vapor Deposition - Principles and Applications. Eds. Academic Press, London UK (1993).
3. M. Masi, M. Di Stanislao, A. Veneroni, and S. Carrà, in: Crystal Growth: from Basic to Applied. Eds. S. Carrà and C. Paorici, Accademia Nazioanle dei Lincei, Roma (Italy), 65 (2003).
4. S. Carrà and M. Masi, Progr. Cryst. Growth Charact. 37, 1 (1998).
5. M. Masi and S. Kommu, in: Silicon Epitaxy. Eds. D. Crippa, D.L. Rode and M. Masi, Academic Press, San Diego CA, 185 (2001).
6. A. Rinaldi, S. Carrà, M. Rampolli, M.C. Martignoni, and M. Masi, J. Phys. IV France 9, Pr8-189 (1999).
7. G. Valente, M. Masi, C. Cavallotti, and S. Carrà, J. Cryst. Growth 230, 247 (2001).
8. K. A. Fichthorn and W. H. Weinberg, J. Chem. Phys. 95, 1090 (1991).
9. H. C. Kang and W. H. Weinberg, J. Chem. Phys. 5, 2824 (1989).
10. C. Cavallotti, A. Barbato, and A. Veneroni, J. Cryst. Growth 266, 371 (2004).
11. K. Raghavachari and J. B. Anderson, J. Phys. Chem. 100, 12960 (1996).
12. M. Masi, R. Zonca, and S. Carrà, J. Electrochem. Soc. 146, 103 (1999).
13. C. Cavallotti and M. Masi, in: Silicon Epitaxy. Eds. D. Crippa, D.L. Rode and M. Masi, Academic Press, San Diego CA, 51 (2001).
14. P. Ho, M. E. Coltrin, and W. G. Breiland, J. Phys. Chem. 98, 10138 (1994).
15. S. M. Gates and K. Kulkarni, Appl. Phys. Lett. 60, 53 (1992).
16. A. T. Voutsas and M. K. Hatalis, J. Electrochem. Soc. 139, 2659 (1992).
17. J. Huang, P. Krulevitch, G. C. Johnson, R. T. Howe, and H. R. Wenk, Mat. Res. Soc. Symp. Proc. 182, 201 (1990).
18. A. Dollet, B. Caussat, and J. P.Couderc, J. Physique IV France 9, Pr8-181 (1999).