Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Camarda, M ^a   La Magna, A ^a   Severino, A ^a   La Via, F ^a  

^a CNR IMM   (Italy)

Author keywords

Step bunching; Step controlled epitaxy; Surface morphologies

Indexed keywords

ATOMIC FORCE MICROSCOPES; GROWTH CONDITIONS; HOMOEPITAXIAL GROWTH; LATTICE KINETICS; LITERATURE DATA; MIS-ORIENTATION; POLYTYPES; STEP BUNCHING; STEP-CONTROLLED EPITAXY; SURFACE INSTABILITY;

COMPUTER SIMULATION; EPITAXIAL GROWTH; MONTE CARLO METHODS; MORPHOLOGY; SURFACE ANALYSIS; SURFACE MORPHOLOGY;

SILICON CARBIDE;

EID: 73649123177     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.078     Document Type: Article

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