A 65-nm high-frequency low-noise CMOS-based RF SoC technology

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 328-335

  Yang, Dajiang ^a   Ding, Yuanli ^a   Huang, Samny ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

65 nm; CMOS; Fmax; FT; Inductor; Metal oxide metal (MOM); NFmin,Q factor; Radio frequency (RF); Varactor

Indexed keywords

65 NM; FT; METAL-OXIDE; Q-FACTORS; RADIO FREQUENCIES;

CAPACITANCE; CAPACITORS; CUTOFF FREQUENCY; METAL INSULATOR BOUNDARIES; METHOD OF MOMENTS; MOS CAPACITORS; MOSFET DEVICES; Q FACTOR MEASUREMENT; RADIO; RADIO WAVES; VARACTORS;

METALS;

EID: 73349116519     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2034994     Document Type: Article

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