-
1
-
-
0021785699
-
"Microwave operation of submicrometer channel-length silicon MOSFET's,"
-
vol. EDL-6, pp. 36-39, Jan. 1985.
-
D. C. Shaver, "Microwave operation of submicrometer channel-length silicon MOSFET's," in IEEE Electron Device Lett., vol. EDL-6, pp. 36-39, Jan. 1985.
-
In IEEE Electron Device Lett.
-
-
Shaver, D.C.1
-
2
-
-
84954129543
-
"MICROX-An advanced silicon technology for microwave circuits up to X-band,"
-
Dec. 1991, pp. 687-690.
-
A. K. Agarwal, M. C. Driver, M. H. Hanes, H. M. Hobgood, P. G. McMullin, H. C. Nathanson, T. W. O'Keeffe, T. J. Smith, J. R. Szedon, and R. N. Thomas, "MICROX-An advanced silicon technology for microwave circuits up to X-band," in IEDM Tech. Dig., Dec. 1991, pp. 687-690.
-
In IEDM Tech. Dig.
-
-
Agarwal, A.K.1
Driver, M.C.2
Hanes, M.H.3
Hobgood, H.M.4
McMullin, P.G.5
Nathanson, H.C.6
O'Keeffe, T.W.7
Smith, T.J.8
Szedon, J.R.9
Thomas, R.N.10
-
3
-
-
0026402028
-
"High-frequency performance of submicrometer channel-length silicon MOSFET's,"
-
vol. 12, pp. 667-669, May 1991.
-
C. Raynaud, J. Gautier, G. Guegan, M. Lerme, E. Playez, and G. Dambrine, "High-frequency performance of submicrometer channel-length silicon MOSFET's," in IEEE Electron Device Lett., vol. 12, pp. 667-669, May 1991.
-
In IEEE Electron Device Lett.
-
-
Raynaud, C.1
Gautier, J.2
Guegan, G.3
Lerme, M.4
Playez, E.5
Dambrine, G.6
-
4
-
-
0026868531
-
T room-temperature silicon MOSFET's,"
-
vol. 13, pp. 256-258, May 1992.
-
T room-temperature silicon MOSFET's," in IEEE Electron Device Lett., vol. 13, pp. 256-258, May 1992.
-
In IEEE Electron Device Lett.
-
-
Yan, R.-H.1
Lee F, K.2
Jeon, D.Y.3
Kirn, Y.O.4
Park, B.G.5
Pinto, M.R.6
Rafferty, C.S.7
Tennant, D.M.8
Westerwick, E.H.9
Chin, G.M.10
Morris, M.D.11
Early, K.12
Mulgrew, P.13
Mansfield, W.M.14
Watts, R.K.15
Voshchenkov, A.M.16
Bokor, J.17
Swartz, R.G.18
Ourmazd, A.19
-
5
-
-
33747071905
-
"High-performance sub-0.1-μm silicon n-metal-oxide-semiconductor transistors with composite metal/polysilicon gates,"
-
vol. 11, no. 6, Nov./Dec. 1993.
-
S. A. Rishton, Y. J. Mil, D. P. Kern, Y. Taur, K. Y. Lee, T. Lu, K. Jenkins, D. Quinlan, T. Brown, Jr., D. Danner, F. Sewell, and M. Polcari, "High-performance sub-0.1-μm silicon n-metal-oxide-semiconductor transistors with composite metal/polysilicon gates," in J. Vac. Sci. Technol. B, vol. 11, no. 6, Nov./Dec. 1993.
-
In J. Vac. Sci. Technol. B
-
-
Rishton, S.A.1
Mil, Y.J.2
Kern, D.P.3
Taur, Y.4
Lee, K.Y.5
Lu, T.6
Jenkins, K.7
Quinlan, D.8
Brown Jr., T.9
Danner, D.10
Sewell, F.11
Polcari, M.12
-
6
-
-
0029513731
-
"Advantage of small geometry silicon MOSFET's for high-frequency analog applications under low-power supply voltage of 0.5 V,"
-
June 1995, pp. 71-72.
-
M. Saito, M. Ono, R. Fujimoto, C. Takahashi, H. Tanimoto, N. Ito, T. Ohguro, T. Yoshitomi, H. S. Momose, and H. Iwai, "Advantage of small geometry silicon MOSFET's for high-frequency analog applications under low-power supply voltage of 0.5 V," in Symp. VLSI Tech. Dig., June 1995, pp. 71-72.
-
In Symp. VLSI Tech. Dig.
-
-
Saito, M.1
Ono, M.2
Fujimoto, R.3
Takahashi, C.4
Tanimoto, H.5
Ito, N.6
Ohguro, T.7
Yoshitomi, T.8
Momose, H.S.9
Iwai, H.10
-
7
-
-
0029545625
-
"An assessment of the state-of-the-art 0.5-μm bulk CMOS technology for RF application,"
-
Dec. 1995, pp. 721-724.
-
S. P. Voinigescu, S. W. Tarasewicz, T. MacElwee, and J. Ilowski, "An assessment of the state-of-the-art 0.5-μm bulk CMOS technology for RF application," in IEDM Tech. Dig., Dec. 1995, pp. 721-724.
-
In IEDM Tech. Dig.
-
-
Voinigescu, S.P.1
Tarasewicz, S.W.2
MacElwee, T.3
Ilowski, J.4
-
8
-
-
0030655213
-
"A mesh-arrayed MOSFET (MA-MOS) for high-frequency analog applications,"
-
1996, pp. 73-74.
-
H. Shimomura, A. Matsuzawa, H. Kimura, G. Hayashi, T. Hirai, and A. Kanda, "A mesh-arrayed MOSFET (MA-MOS) for high-frequency analog applications," in Symp. VLSI Tech. Dig., 1996, pp. 73-74.
-
In Symp. VLSI Tech. Dig.
-
-
Shimomura, H.1
Matsuzawa, A.2
Kimura, H.3
Hayashi, G.4
Hirai, T.5
Kanda, A.6
-
9
-
-
0029717430
-
"0.2-ftm analog CMOS with very low noise figure at 2 GHz operation,"
-
May 1997, pp. 132-133.
-
T. Ohguro, E. Morifuji, M. Saito, M. Ono, T. Yoshitomi, H. S. Momose, N. Ito, and H. Iwai, "0.2-ftm analog CMOS with very low noise figure at 2 GHz operation," in Symp. VLSI Tech. Dig., May 1997, pp. 132-133.
-
In Symp. VLSI Tech. Dig.
-
-
Ohguro, T.1
Morifuji, E.2
Saito, M.3
Ono, M.4
Yoshitomi, T.5
Momose, H.S.6
Ito, N.7
Iwai, H.8
-
10
-
-
85063589585
-
"Design methodology of deep submicron CMOS devices for 1 V operation,"
-
1993, pp. 89-90.
-
H. Oyamatsu, M. Kinugawa, and M. Kakumu, "Design methodology of deep submicron CMOS devices for 1 V operation," in Symp. VLSI Tech. Dig., 1993, pp. 89-90.
-
In Symp. VLSI Tech. Dig.
-
-
Oyamatsu, H.1
Kinugawa, M.2
Kakumu, M.3
-
11
-
-
0028578426
-
"An ultra-low-power 0.l-//m CMOS,"
-
1994, pp. 9-10.
-
Y. Mii, S. Wind, Y. Taur, Y. Lii, D. Klaus, and J. Bucchignano, "An ultra-low-power 0.l-//m CMOS," in Symp. VLSI Tech. Dig., 1994, pp. 9-10.
-
In Symp. VLSI Tech. Dig.
-
-
Mii, Y.1
Wind, S.2
Taur, Y.3
Lii, Y.4
Klaus, D.5
Bucchignano, J.6
-
12
-
-
0029702277
-
"A 0.25-//m gate length CMOS technology for 1 V low-power applications-Device design and power/performance considerations,"
-
1995, pp. 68-69.
-
M. Nandakumar, A. Chatterjee, G. Stacey, and I.-C. Chen, "A 0.25-//m gate length CMOS technology for 1 V low-power applications-Device design and power/performance considerations," in Symp. VLSI Tech. Dig., 1995, pp. 68-69.
-
In Symp. VLSI Tech. Dig.
-
-
Nandakumar, M.1
Chatterjee, A.2
Stacey, G.3
Chen, I.-C.4
-
13
-
-
0029359285
-
"1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS,"
-
vol. 30, pp. 847-854, Aug. 1995.
-
M. Shin'ichiro, D. Takakuni, M. Yasuyuki, A. Takashiro, S. Satoshi, and Y. Junzo, "1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS," in IEEE J. Solid-State Circuits, vol. 30, pp. 847-854, Aug. 1995.
-
In IEEE J. Solid-State Circuits
-
-
Shin'Ichiro, M.1
Takakuni, D.2
Yasuyuki, M.3
Takashiro, A.4
Satoshi, S.5
Junzo, Y.6
-
14
-
-
0030403888
-
"Channel profile optimization and device design for low-power highperformance dynamic-threshold MOSFET,"
-
Dec. 1996, pp. 113-116.
-
C. Wann, F. Assaderaghi, R. Dennard, C. Hu, G. Shahidi, and Y. Taur, "Channel profile optimization and device design for low-power highperformance dynamic-threshold MOSFET," in IEDM Tech. Dig., Dec. 1996, pp. 113-116.
-
In IEDM Tech. Dig.
-
-
Wann, C.1
Assaderaghi, F.2
Dennard, R.3
Hu, C.4
Shahidi, G.5
Taur, Y.6
-
15
-
-
0030647286
-
"Dual threshold voltages and substrate bias: Keys to high-performance, low-power, 0.1/j,m logic designs,"
-
June 1997, pp. 69-70.
-
S. Thompson, I. Young, J. Greason, and M Bohr, "Dual threshold voltages and substrate bias: Keys to high-performance, low-power, 0.1/j,m logic designs," in Symp. VLSI Tech. Dig., June 1997, pp. 69-70.
-
In Symp. VLSI Tech. Dig.
-
-
Thompson, S.1
Young, I.2
Greason, J.3
Bohr, M.4
-
16
-
-
0029715056
-
"High-performance 0.15-μm single gate Co salicide CMOS,"
-
June 1996, pp. 34-35.
-
T. Yoshitomi, T. Ohguro, M. Saito, M. Ono, E. Morifuji, H. S. Momose, and H. Iwai, "High-performance 0.15-μm single gate Co salicide CMOS," in Symp. VLSI Tech Dig., June 1996, pp. 34-35.
-
In Symp. VLSI Tech Dig.
-
-
Yoshitomi, T.1
Ohguro, T.2
Saito, M.3
Ono, M.4
Morifuji, E.5
Momose, H.S.6
Iwai, H.7
-
17
-
-
0023995279
-
"Deep-submicrometer MOS device fabrication using a photoresist-ashing technique,"
-
vol. 9, pp. 186-188, Apr. 1988.
-
J. Chung, M.-C. Jeng, J. E. Moon, A. T. Woo, T. Y. Chan, P. K. Ko, and C. Hu, "Deep-submicrometer MOS device fabrication using a photoresist-ashing technique," in IEEE Electron Device Lett., vol. 9, pp. 186-188, Apr. 1988.
-
In IEEE Electron Device Lett.
-
-
Chung, J.1
Jeng, M.-C.2
Moon, J.E.3
Woo, A.T.4
Chan, T.Y.5
Ko, P.K.6
Hu, C.7
-
18
-
-
0023576614
-
"A new straightforward calibration and correction procedure for 'on wafer' high-frequency 5-parameter measurements (45 MHz-18 GHz),"
-
1987, pp. 70-73.
-
P. J. van Wijnen, H. R. Claessen, and E. A. Wolsheimer, "A new straightforward calibration and correction procedure for 'on wafer' high-frequency 5-parameter measurements (45 MHz-18 GHz)," in Proc. IEEE Bipolar Circuits Technol. Meet., 1987, pp. 70-73.
-
In Proc. IEEE Bipolar Circuits Technol. Meet.
-
-
Van Wijnen, P.J.1
Claessen, H.R.2
Wolsheimer, E.A.3
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