Laser-induced current transients in strained-si diodes

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3203-3209

  Park, Hyunwoo ^a   Cummings, Daniel J ^a   Arora, Rajan ^b   Pellish, Jonathan A ^c   Reed, Robert A ^b   Schrimpf, Ronald D ^b   McMorrow, Dale ^d   Armstrong, Sarah E ^b   Roh, Ukjin ^a   Nishida, Toshikazu ^a   Law, Mark E ^a   Thompson, Scott E ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Current transient; Pulsed laser; Silicon diode; Single event transient (set); Single event upset (SEU); Strained silicon; Uniaxial stress

Indexed keywords

CURRENT TRANSIENTS; PULSED LASER; SILICON DIODES; SINGLE EVENT TRANSIENTS; SINGLE EVENT UPSETS; STRAINED-SILICON; UNIAXIAL STRESS;

COMPRESSIVE STRESS; DIODES; DYE LASERS; ELECTRIC NETWORK ANALYSIS; ELECTRON MOBILITY; FLOODS; JIGS; LANDFORMS; LASERS; PULSED LASER APPLICATIONS; TENSILE STRESS; TRANSIENTS; URANIUM POWDER METALLURGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72349100573     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2033361     Document Type: Conference Paper

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