Basic mechanisms and modeling of single-event upset in digital microelectronics

IEEE Transactions on Nuclear Science

Volumn 50 III, Issue 3, 2003, Pages 583-602

  Dodd, Paul E ^a   Massengill, Lloyd W ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Charge collection; Heavy ion irradiation; Radiation effects; Radiation hardening; Single event effects; Single event upset; Soft errors; Terrestrial cosmic rays

Indexed keywords

COMBINATORIAL CIRCUITS; COMPUTER SIMULATION; COSMIC RAYS; DYNAMIC RANDOM ACCESS STORAGE; HEAVY IONS; INTEGRATED CIRCUITS; ION BOMBARDMENT; MICROELECTRONICS; MOS DEVICES; RADIATION HARDENING; SPACE APPLICATIONS; STATIC RANDOM ACCESS STORAGE;

CHARGE COLLECTION; DIGITAL MICROELECTRONICS; HEAVY ION IRRADIATION; SINGLE-EVENT EFFECTS; SINGLE-EVENT UPSET; TERRESTRIAL COSMIC RAYS;

RADIATION EFFECTS;

EID: 0038721289     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.813129     Document Type: Article

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