Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2407-2412

  DasGupta, S ^a,b   Witulski, A F ^a,c   Bhuva, B L ^a,c   Alles, M L ^a,c   Reed, R A ^a,c   Amusan, O A ^a,b   Ahlbin, J R ^a,b   Schrimpf, R D ^a,c   Massengill, L W ^a,c  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

Field funneling; Potential modulation; Pulse shape; Pulse width; Single event; TCAD

Indexed keywords

FIELD FUNNELING; POTENTIAL MODULATION; PULSE SHAPE; PULSE WIDTH; SINGLE EVENTS;

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTROSTATICS; TRANSIENT ANALYSIS; VOLTAGE CONTROL; WAVEFORM ANALYSIS;

CMOS INTEGRATED CIRCUITS;

EID: 37249070350     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910863     Document Type: Conference Paper

References (17)

1. C. Hu, "Alpha-particle-induced field and enhanced collection of carriers," IEEE Electron Dev. Lett., vol. EDL-3, no. 2, pp. 31-34, Feb. 1982.
2. F. B. McLean and T. R. Oldham, "Charge funneling in n-and p-type si substrates," IEEE Trans. Nucl. Sci., vol. NS-29, no. 6, pp. 2018-2023, Dec. 1982.
3. G. C. Messenger, "Collection of charge on junction nodes from ion tracks," IEEE Trans. Nucl. Sci., vol. NS-29, no. 6, pp. 2024-2031, Dec. 1982.
4. E. Paul Dodd, "Device simulation of charge collection and single-event upset," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 561-575, Apr. 1996.
5. E. Paul Dodd and W. Lloyd Massengill, "Basic mechanisms and modeling of single-event upset in digital microelectronics," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 583-602, Jun. 2003.
6. P. Eaton, J. Benedetto, D. Mavis, K. Avery, M. Sibley, M. Gadlage, and T. Turflinger, "Single event transient pulsewidth measurements using a variable temporal latch technique," IEEE Trans. Nucl. Sci., vol. 51, no. 6. pp. 3365-3368, Dec. 2004.
7. J. Benedetto, P. Eaton, D. Mavis, M. Gadlage, and T. Turflinger, "Digital single event transient trends with technology node scaling," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3462-3465, Dec. 2006.
8. M. P. Baze, J. Wert, J. W. Clement, M. G. Hubert, A. Witulski, O. A. Amusan, L. Massengill, and D. McMorrow, "Propagating SET characterization technique for digital CMOS libraries," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3472-3478, Dec. 2006.
9. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3278-3284, Dec. 2004.
10. V. Ferlet-Cavrois, P. Palliet. M. Gaillardin, D. Lambert, J. Baggio, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, K. Hirose, E. W. Blackmore, O. Faynot, C. Jahan, and L. Tosti, "Statistical analysis of the charge collected in soi and bulk devices under heavy Ion and proton irradiation-implications for digital SETs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3242-3252, Dec. 2006.
11. C. L. Axness, H. T. Weaver, J. S. Fu, R. Koga, and W. A. Kolasinski, "Mechanisms leading to single event upset," IEEE Trans. Nucl. Sci., vol. NS-33, no. 6, pp. 1577-1580, Dec. 1986.
12. Synopsis Dessis and Devise Manuals, Release 10.0, 2005.
13. R. A. Reed, G. Vizkelethy, J. A. Pellish, B. Sierawski, K. M. Warren, M. Porter, J. Wilkinson, P. W. Marshall, G. Niu, J. D. Cressler, R. D. Schrimpf. A. D. Tipton, and R. A. Weiler, "Applications of heavy ion microprobe for single event effects analysis," Nucl. Instrum. Meth. B, 2007, to be published.
14. H. Egawa, "Avalanche characteristics and failure mechanisms of high voltage diodes," IEEE Trans. Electron Dev., vol. ED-13, no. 11, pp. 754-758, Nov. 1966.
15. M. Domeij, J. Lutz, and D. Silber. "On the destruction limit of si power diodes during reverse recovery with dynamic avalanche," IEEE Trans. Electron Dev., vol. 50, no. 2, pp. 486-493, Feb. 2003.
16. C. M. Hsieh, P. C. Murley, and R. R. OBrien, "Collection of charge from alpha-particle tracks in silicon devices," IEEE Trans. Electron Dev., vol. ED-30, no. 6, pp. 686-693, Jun. 1981.
17. A. M. Albadri. R. D. Schrimpf, K. F. Galloway, and D. G. Walker, "Single event burnout in power diodes: Mechanisms and models," Microelectron. Reliab., vol. 46, pp. 317-325, 2006.