A comprehensive study of reducing the STI mechanical stress effect on channel-width-dependent Idsat

Semiconductor Science and Technology

Volumn 22, Issue 12, 2007, Pages 1292-1297

  Li, Rui ^a,b,c   Yu, Liujiang ^c   Xin, Haiwei ^c   Dong, Yemin ^c   Tao, Kai ^c   Wang, Chingdong ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; HIGH TEMPERATURE EFFECTS; NUMERICAL METHODS; SEMICONDUCTOR DEVICES;

CHANNEL WIDTHS; MECHANICAL STRESS EFFECTS; SATURATION DRAIN CURRENTS;

STRESS ANALYSIS;

EID: 36448948305     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/12/009     Document Type: Article

References (10)

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