Physical origins of mobility enhancement of Ge pMISFETs with Si passivation layers

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 80-81

  Taoka, N ^a   Mizubayashi, W ^a   Morita, Y ^a   Migita, S ^a   Ota, H ^a   Takagi, S ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Band structure; Defect; Ge; Mobility; Si passivation

Indexed keywords

CHANNEL REGION; COULOMB SCATTERING; DISLOCATION GENERATION; EFFECTIVE FIELD; GE; INTERFACE CHARGE; MOBILE CARRIERS; MOBILITY; MOBILITY DEGRADATION; MOBILITY ENHANCEMENT; PASSIVATION LAYER; SI LAYER; SI PASSIVATION; SI/GE; SPATIAL DISTRIBUTION;

BAND STRUCTURE; GERMANIUM; SILICON; SINGLE CRYSTALS; SIZE DISTRIBUTION; SURFACE ROUGHNESS;

PASSIVATION;

EID: 71049134867     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. P. Zimmerman et al., IEDM, 655(2006).
2. T. Yamamoto et al., IEDM, 1041(2007).
3. J. Mitard et al., 873(2008).
4. N. Taoka et al., The absts. of Int. Symp. Advanced Gate Stack Technology(2008).
5. S. Takagi et al., TED, 41, 2357 (1994).
6. K. Seeger, Semiconductor Physics, Springer, Berlin, 2003, Chap. 6.
7. C. K. Maiti et al., Semicond. Sci. Technol., 13, 1225 (1998).
8. Th. Vogelsang et al., APL 63, 12 (1993).
9. R. H. Bube, Electronic properties of crystalline solids, Academic press, 1974,p.286