Radical oxygen (O*) process for highly-reliable SiO2 with higher film-density and smoother SiO2/Si interface

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 593-596

  Nagamine, Makoto ^a   Itoh, Hitoshi ^a   Satake, Hideki ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSIFICATION; DIELECTRIC FILMS; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDATION; SILICA; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING; X RAY SPECTROSCOPY;

RADICAL OXYGEN PROCESS;

MOSFET DEVICES;

EID: 0032267114     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)