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Volumn 95, Issue 21, 2009, Pages

Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

(11) Lo, M H a,b Tu, P M a Wang, C H a Cheng, Y J a,b Hung, C W a Hsu, S C b Kuo, H C a Zan, H W a Wang, S C a Chang, C Y a Liu, C M c

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

c Sino American Silicon Productions Inc (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; DEFECT PASSIVATION; DEFECT SITES; EPIWAFERS; FABRICATED CHIPS; GAN EPITAXIAL GROWTH; OUTPUT POWER; OVER GROWTH; PASSIVATION METHODS; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES;

DEFECTS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PHYSICAL OPTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SILICON OXIDES; WATER ANALYSIS;

PASSIVATION;

EID: 71549147831 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3266859 Document Type: Article

Times cited : (38)

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