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Volumn 92, Issue 23, 2008, Pages

Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching

(5) Albrecht, M a Weyher, J L b,c Lucznik, B c Grzegory, I c Porowski, S c

a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

b RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

c INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL IMPURITIES; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; IMPURITIES; LIGHT EMISSION; LUMINESCENCE; MAPS; NONMETALS; OXYGEN; PHOTOMAPPING; SEMICONDUCTING GALLIUM; SILICON; SINGLE CRYSTALS;

(100) SILICON; AMERICAN INSTITUTE OF PHYSICS (AIP); CATHODOLUMINESCENCE (CL); DEFECT SELECTIVE ETCHING; DISLOCATION (MOBILITY); ELECTRICAL FIELDS; GETTERING; NONRADIATIVE (NR) RECOMBINATION; RECOMBINATION STRENGTH; SCREW DISLOCATIONS; THREADING DISLOCATIONS (TD);

DISLOCATIONS (CRYSTALS);

EID: 45149115400 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2928226 Document Type: Article

Times cited : (83)

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