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Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

Air-voids embedded high efficiency InGaN-light emitting diode

(7) Park, Eun Hyun a Jang, Jin a Gupta, Shalini b Ferguson, Ian b Kim, Cheol Hoi c Jeon, Soo Kun c Park, Joong Seo c

a Kyung Hee University (South Korea)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

c EpiValley Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; EPITAXIAL LAYERS; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT REFLECTION; LIGHT SOURCES; MOLECULAR BEAM EPITAXY; PHYSICAL OPTICS; RAY TRACING; SEMICONDUCTING GALLIUM; SUBSTRATES;

AIR VOIDS; CHEMICAL ETCHINGS; FLAT SUBSTRATES; GAN CRYSTALS; GAN EPITAXIAL LAYERS; HIGH EFFICIENCIES; LIGHT EXTRACTIONS; OPTICAL POWERS; PATTERNED SAPPHIRE SUBSTRATES; PATTERNED SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 56249092420 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2998596 Document Type: Article

Times cited : (82)

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