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Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

(3) Weyher, J L a Ashraf, H b Hageman, P R b

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; DISLOCATIONS DENSITIES; ETCH PITS; GAN LAYERS; GAN TEMPLATE; GROWTH PROCESS; HYDRIDE VAPOR PHASE EPITAXY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOLTEN SALT; OPTIMIZED CONDITIONS; PHOTO-ETCHING;

CRYSTAL GROWTH; DEFECT DENSITY; EPITAXIAL LAYERS; FUSED SALTS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 67651247341 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3171928 Document Type: Article

Times cited : (48)

References (15)

1
- 84958889335
- 1st ed., edited by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley VCH, Weinheim, Germany).
- Nitride Semiconductors: Handbook on Materials and Devices, 1st ed., edited by, P. Ruterana, M. Albrecht, and, J. Neugebauer, (Wiley VCH, Weinheim, Germany, 2003).
- (2003) Nitride Semiconductors: Handbook on Materials and Devices

2
- 1842686053
- 0031-8965,. 10.1002/1521-396X(200112)188:2<523::AID-PSSA523>3.0. CO;2-R
- P. R. Hageman, S. Haffouz, V. Kirilyuik, A. Grzegorczyk, and P. K. Larsen, Phys. Status Solidi A 0031-8965 188, 523 (2001). 10.1002/1521- 396X(200112)188:2<523::AID-PSSA523>3.0.CO;2-R
- (2001) Phys. Status Solidi A , vol.188 , pp. 523
- Hageman, P.R.¹ Haffouz, S.² Kirilyuik, V.³ Grzegorczyk, A.⁴ Larsen, P.K.⁵

3
- 9744235815
- 0003-6951,. 10.1063/1.1808237
- A. Krost, A. Dadgar, J. Blasing, A. Diez, T. Hempel, S. Petzold, J. Christen, and R. Clos, Appl. Phys. Lett. 0003-6951 85, 3441 (2004). 10.1063/1.1808237
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3441
- Krost, A.¹ Dadgar, A.² Blasing, J.³ Diez, A.⁴ Hempel, T.⁵ Petzold, S.⁶ Christen, J.⁷ Clos, R.⁸

4
- 2942611157
- 0022-0248,. 10.1016/j.jcrysgro.2004.03.020
- K. Pakua, R. Boek, J. M. Baranowski, J. Jasinski, and Z. Liliental-Weber, J. Cryst. Growth 0022-0248 267, 1 (2004). 10.1016/j.jcrysgro.2004.03.020
- (2004) J. Cryst. Growth , vol.267 , pp. 1
- Pakua, K.¹ Boek, R.² Baranowski, J.M.³ Jasinski, J.⁴ Liliental-Weber, Z.⁵

5
- 40549114606
- Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands
- DOI 10.1063/1.2890488
- J. -S. Ha, H. -J. Lee, S. W. Lee, H. J. Lee, S. H. Lee, H. Goto, M. W. Cho, T. Yao, S. -K. Hong, R. Toba, J. W. Lee, and J. Y. Lee, Appl. Phys. Lett. 0003-6951 92, 091906 (2008). 10.1063/1.2890488 (Pubitemid 351357369)
- (2008) Applied Physics Letters , vol.92 , Issue.9 , pp. 091906
- Ha, J.-S.¹ Lee, H.-J.² Lee, S.W.³ Lee, H.J.⁴ Lee, S.H.⁵ Goto, H.⁶ Cho, M.W.⁷ Yao, T.⁸ Hong, S.-K.⁹ Toba, R.¹⁰ Lee, J.W.¹¹ Lee, J.Y.¹²

6
- 49749101708
- 1099-0062,. 10.1149/1.2943662
- X. Wang, G. Yu, C. Lin, M. Cao, H. Gong, M. Qi, and A. Lia, Electrochem. Solid-State Lett. 1099-0062 11, H273 (2008). 10.1149/1.2943662
- (2008) Electrochem. Solid-State Lett. , vol.11 , pp. 273
- Wang, X.¹ Yu, G.² Lin, C.³ Cao, M.⁴ Gong, H.⁵ Qi, M.⁶ Lia, A.⁷

7
- 0043100979
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
- DOI 10.1063/1.120688, PII S0003695198011024
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Hamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 0003-6951 72, 211 (1998). 10.1063/1.120688 (Pubitemid 128672263)
- (1998) Applied Physics Letters , vol.72 , Issue.2 , pp. 211-213
- Nakamura, S.¹ Senoh, M.² Nagahama, S.-I.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸ Kozaki, T.⁹ Umemoto, H.¹⁰ Sano, M.¹¹ Chocho, K.¹²

8
- 0032643182
- 0022-0248,. 10.1016/S0022-0248(98)01344-X
- S. Nakamura, J. Cryst. Growth 0022-0248 201, 290 (1999). 10.1016/S0022-0248(98)01344-X
- (1999) J. Cryst. Growth , vol.201 , pp. 290
- Nakamura, S.¹

9
- 0035855024
- 0953-8984,. 10.1088/0953-8984/13/32/306
- K. Hiramatsu, J. Phys.: Condens. Matter 0953-8984 13, 6961 (2001). 10.1088/0953-8984/13/32/306
- (2001) J. Phys.: Condens. Matter , vol.13 , pp. 6961
- Hiramatsu, K.¹

10
- 0036678759
- Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy
- DOI 10.1063/1.1489711
- V. Wagner, O. Parillaud, H. J. Bühlmann, M. Ilegems, S. Gradecak, P. Stadelmann, T. Riemann, and J. Christen, J. Appl. Phys. 0021-8979 92, 1307 (2002). 10.1063/1.1489711 (Pubitemid 34924352)
- (2002) Journal of Applied Physics , vol.92 , Issue.3 , pp. 1307
- Wagner, V.¹ Parillaud, O.² Buhlmann, H.J.³ Ilegems, M.⁴ Gradecak, S.⁵ Stadelmann, P.⁶ Riemann, T.⁷ Christen, J.⁸

11
- 34347361547
- Dislocation reduction in GaN crystal by advanced-DEEP
- DOI 10.1016/j.jcrysgro.2007.03.038, PII S0022024807003673
- K. Motoki, T. Okahisa, R. Hirota, S. Nakahata, K. Uematsu, and N. Matsumoto, J. Cryst. Growth 0022-0248 305, 377 (2007). 10.1016/j.jcrysgro.2007. 03.038 (Pubitemid 47016513)
- (2007) Journal of Crystal Growth , vol.305 , Issue.2 SPEC. ISS. , pp. 377-383
- Motoki, K.¹ Okahisa, T.² Hirota, R.³ Nakahata, S.⁴ Uematsu, K.⁵ Matsumoto, N.⁶

12
- 33845315243
- Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods
- DOI 10.1016/j.spmi.2006.06.011, PII S0749603606000607
- J. L. Weyher, Superlattices Microstruct. 0749-6036 40, 279 (2006). 10.1016/j.spmi.2006.06.011 (Pubitemid 44873062)
- (2006) Superlattices and Microstructures , vol.40 , Issue.4-6 SPEC. ISS. , pp. 279-288
- Weyher, J.L.¹

13
- 34347333392
- Orthodox etching of HVPE-grown GaN
- DOI 10.1016/j.jcrysgro.2007.03.030, PII S0022024807003661
- J. L. Weyher, S. Lazar, L. Macht, Z. Liliental-Weber, R. J. Molnar, S. Müller, V. G. M. Sivel, G. Nowak, and I. Grzegory, J. Cryst. Growth 0022-0248 305, 384 (2007). 10.1016/j.jcrysgro.2007.03.030 (Pubitemid 47016512)
- (2007) Journal of Crystal Growth , vol.305 , Issue.2 SPEC. ISS. , pp. 384-392
- Weyher, J.L.¹ Lazar, S.² Macht, L.³ Liliental-Weber, Z.⁴ Molnar, R.J.⁵ Muller, S.⁶ Sivel, V.G.M.⁷ Nowak, G.⁸ Grzegory, I.⁹

14
- 49449107661
- 0022-0248,. 10.1016/j.jcrysgro.2008.06.031
- H. Ashraf, J. L. Weyher, G. W. G. van Dreumel, A. Grzegorczyk, and P. R. Hageman, J. Cryst. Growth 0022-0248 310, 3957 (2008). 10.1016/j.jcrysgro.2008. 06.031
- (2008) J. Cryst. Growth , vol.310 , pp. 3957
- Ashraf, H.¹ Weyher, J.L.² Van Dreumel, G.W.G.³ Grzegorczyk, A.⁴ Hageman, P.R.⁵

15
- 28444480222
- 0003-6951,. 10.1063/1.2093931
- Z. Zhang and T. S. Sudarshan, Appl. Phys. Lett. 0003-6951 87, 151913 (2005). 10.1063/1.2093931
- (2005) Appl. Phys. Lett. , vol.87 , pp. 151913
- Zhang, Z.¹ Sudarshan, T.S.²

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