Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

Applied Physics Letters

Volumn 86, Issue 23, 2005, Pages 1-3

  Ozgur U ^a   Fu, Y ^a   Moon, Y T ^a   Yun, F ^a   Morko H ^a   Everitt, H O ^b,c   Park, S S ^d   Lee, K Y ^d  

^a Virginia Commonwealth University   (United States)

^b DUKE UNIVERSITY   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; EXCITATION ENERGY; HYDRIDE VAPOR PHASE EPITAXY (HVPE); ROOM TEMPERATURE;

AMMONIA; ANNEALING; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POROUS MATERIALS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 21244475611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1944903     Document Type: Article

References (18)

1. H. Morko̧, " Nitride Semiconductors and Devices " (Springer, Berlin, 1999).
2. M. A. Reshchikov and H. Morko̧, J. Appl. Phys. 97, 061301 (2005).
3. P. Visconti, K. M. Jones, M. A. Reshchikov, F. Yun, R. Cingolani, H. Morko̧, S. S. Park, and K. Y. Lee, Appl. Phys. Lett. 77, 3743, (2000).
4. Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, and A. Usui, Phys. Status Solidi A 194, 554 (2002).
5. See for example, P. Gibart, B. Beaumont, and P. Venńgùs, Handbook on Materials and Devices, edited by, P. Ruterana, M. Albrecht, and, J. Neugebauer, (Wiley-VCH GmbH & Co.KgaA, Weinheim, 2003), Chap. 2.
6. S. Haffouz, B. Beaumont, P. Vennegues, and P. Gibart, Phys. Status Solidi A 176, 677 (1999).
7. S. Sakai, T. Wang, Y. Morishima, and Y. Naoi, J. Cryst. Growth 221, 334 (2000).
8. A. Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, Y. Fu, Y. T. Moon, and H. Morko̧, Phys. Status Solidi A 202, 722 (2005).
9. Y. Fu, Y. T. Moon, F. Yun, Ü. Özgür, J. Q. Xie, S. Doǧan, H. Morko̧, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, Appl. Phys. Lett. 86, 043108 (2005).
10. Ho Ki Kwon, C. J. Eiting, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, Z. Liliental-Weber, and M. Benamara, Appl. Phys. Lett. 77, 2503 (2000).
11. G. E. Bunea, W. D. Herzog, M. S. Ünlü, B. B. Goldberg, and R. J. Molnar, Appl. Phys. Lett. 75, 838 (1999).
12. S. Juršėnas, S. Miasojedovas, G. Kurilčik, A. Žukauskas, and P. R. Hageman, Phys. Status Solidi A 201, 199 (2004).
13. A. V. Sampath, G. A. Garrett, C. J. Collins, P. Boyd, J. Choe, P. G. Newman, H. Shen, M. Wraback, R. J. Molnar, and J. Caissie, J. Vac. Sci. Technol. B 22, 1487 (2004).
14. S. Juršėnas, N. Kurilčik, G. Kurilčik, A. Žukauskas, P. Prystawko, M. Leszcynski, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 78, 3776 (2001).
15. S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, and S. Nakamura, Appl. Phys. Lett. 74, 1460 (1999).
16. T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, J. Lumin. 87, 1196 (2000).
17. W. H. Press, B. P. Flannery, S. A. Tuekolsky, and W. T. Vetterling, Numerical Recipes in C: The Art of Scientific Computing (Cambridge University Press, Cambridge, UK, 1988).
18. Z. Z. Bandić, P. M. Bridger, E. C. Piquette, and T. C. McGill, Appl. Phys. Lett. 72, 3166 (1998).