Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency

IEEE Journal of Quantum Electronics

Volumn 44, Issue 12, 2008, Pages 1211-1218

  Sheu, Jinn Kong ^a   Lee, Ming Lun ^b   Lu, Y S ^a   Shu, K W ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Ga doped zinc oxide; Gallium nitride; Gallium oxide; Light emitting diodes; Transparent contact layer

Indexed keywords

CO-SPUTTERING DEPOSITION; COMPOSITE OXIDE FILMS; CONTACT LAYERS; E-BEAM EVAPORATORS; ELECTRICAL RESISTIVITY; GA-DOPED; GA-DOPED ZINC OXIDE; GA-DOPED ZNO; GALLIUM OXIDES; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; HIGH REFRACTIVE INDEX; HIGH TRANSPARENCY; INDIUM TIN OXIDE; ITO FILMS; LIGHT EXTRACTION; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; LOW RESISTIVITY; NITROGEN AMBIENT; OPTICAL TRANSPARENCY; SAPPHIRE SUBSTRATES; SURFACE-ROUGHENING; THERMAL-ANNEALING; TOP SURFACE; TRANSPARENT CONDUCTIVE OXIDE FILMS; VISIBLE LIGHT; ZNO;

COMPOSITE FILMS; CONDUCTIVE FILMS; DIODES; ELECTRIC CONDUCTIVITY; EXTRACTION; GALLIUM NITRIDE; ITO GLASS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT REFRACTION; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE FILMS; REFRACTIVE INDEX; REFRACTOMETERS; TIN; TITANIUM COMPOUNDS; TRANSPARENCY; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 71449114533     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.2002101     Document Type: Article

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