Photoluminescence of ZnO:Ga thin films fabricated by pulsed laser deposition technique

Journal of Electroceramics

Volumn 13, Issue 1-3, 2004, Pages 183-187

  Liu, Z F ^a,b   Shan, F K ^a   Sohn, J Y ^a   Kim, S C ^a   Kim, G Y ^a   Li, Y X ^b   Yu, Y S ^a  

^a Dong Eui University   (South Korea)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Ga doped ZnO; Photoluminescence; Thin films

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; CHEMICAL SENSORS; GALLIUM; LIGHT EMISSION; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTOR MATERIALS; ZINC OXIDE;

BURSTEIN-MOSS EFFECTS; GA-DOPED ZNO; NEAR BAND EDGE (NBE) EMISSIONS; PHOTOLUMINESCENCE (PL) SPECTRA; TRANSPARENT CONDUCTING OXIDES (TCO);

THIN FILMS;

EID: 17144424181     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-004-5096-9     Document Type: Conference Paper

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