Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes

Journal of Applied Physics

Volumn 89, Issue 2, 2001, Pages 1506-1508

  Kim, Hyunsoo ^a   Kim, Dong Joon ^a   Park, Seong Ju ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001645382     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1334631     Document Type: Article

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